CFY77-10 - Siemens Semiconductor Group

CFY77-10 AlGaAs / InGaAs HEMT (Very low noise Very high gain For low noise front end amplifiers up to 20 GHz For DBS down converters)

AlGaAs / InGaAs HEMT CFY 77 ________________________________________________________________________________________________________ Datasheet Features * Very low noise * Very high gain * For low noise front end amplifiers up to 20 GHz * For DBS down converters ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking .

Features

* Very low noise
* Very high gain
* For low noise front end amplifiers up to 20 GHz
* For DBS down converters ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering code (taped) Package 1) CFY77-08 CFY77-10 HG HH Q62702-F1549 Q62702-F1559 MW-4 MW-4 Maximum ratings Drain-source voltage Drain-gate voltage Gate-source voltage Drain current Channel temperature Storage temperature range Total power dissipation (TS < 51°C) 2) Thermal resistance Channel-soldering point source 1) Dimensions see chapter Package Outlines 2) TS: Temperature measured .