AlGaAs / InGaAs HEMT CFY 77 ________________________________________________________________________________________________________ Datasheet Features * Very low noise * Very high gain * For low noise front end amplifiers up to 20 GHz * For DBS down converters ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking .
* Very low noise
* Very high gain
* For low noise front end amplifiers up to 20 GHz
* For DBS down converters
ESD:
Electrostatic discharge sensitive device, observe handling precautions!
Type
Marking
Ordering code (taped)
Package 1)
CFY77-08 CFY77-10
HG HH
Q62702-F1549 Q62702-F1559
MW-4 MW-4
Maximum ratings Drain-source voltage Drain-gate voltage Gate-source voltage Drain current Channel temperature Storage temperature range Total power dissipation (TS < 51°C) 2) Thermal resistance Channel-soldering point source
1) Dimensions see chapter Package Outlines 2) TS: Temperature measured .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | CFY77-08 |
Siemens Semiconductor Group |
AlGaAs / InGaAs HEMT (Very low noise Very high gain For low noise front end amplifiers up to 20 GHz For DBS down converters) | |
2 | CFY77-10 |
Siemens Semiconductor Group |
AlGaAs / InGaAs HEMT (Very low noise Very high gain For low noise front end amplifiers up to 20 GHz For DBS down converters) | |
3 | CFY25 |
Siemens Semiconductor Group |
GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization) | |
4 | CFY25 |
Infineon |
HiRel X-Band GaAs MOSFET | |
5 | CFY25-17 |
Siemens Semiconductor Group |
GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization) | |
6 | CFY25-20 |
Siemens Semiconductor Group |
GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization) | |
7 | CFY25-20 |
Infineon |
HiRel X-Band GaAs MOSFET | |
8 | CFY25-20P |
Infineon |
HiRel X-Band GaAs MOSFET | |
9 | CFY25-23 |
Siemens Semiconductor Group |
GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization) | |
10 | CFY25-23 |
Infineon |
HiRel X-Band GaAs MOSFET | |
11 | CFY25-23P |
Infineon |
HiRel X-Band GaAs MOSFET | |
12 | CFY25-P |
Infineon |
HiRel X-Band GaAs MOSFET |