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CFY77-10 |
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| Part Number | CFY77-10 |
| Manufacturer | Siemens Semiconductor Group |
| Description | AlGaAs / InGaAs HEMT CFY 77 ________________________________________________________________________________________________________ Datasheet Features * Very low noise * Very high gain * For low n... |
| Features |
* Very low noise * Very high gain * For low noise front end amplifiers up to 20 GHz * For DBS down converters
ESD:
Electrostatic discharge sensitive device, observe handling precautions!
Type
Marking
Ordering code (taped)
Package 1)
CFY77-08 CFY77-10
HG HH
Q62702-F1549 Q62702-F1559
MW-4 MW-4
Maximum ratings Drain-source voltage Drain-gate voltage Gate-source voltage Drain current Channel temperature Storage temperature range Total power dissipation (TS < 51°C) 2) Thermal resistance Channel-soldering point source
1) Dimensions see chapter Package Outlines 2) TS: Temperature measured ... |
| Document |
 CFY77-10 Data Sheet
PDF 27.29KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | CFY77-08 |
Siemens Semiconductor Group |
AlGaAs / InGaAs HEMT (Very low noise Very high gain For low noise front end amplifiers up to 20 GHz For DBS down converters) |
|
| 2 | CFY77 |
Siemens Semiconductor Group |
AlGaAs / InGaAs HEMT (Very low noise Very high gain For low noise front end amplifiers up to 20 GHz For DBS down converters) |
|
| 3 | CFY25 |
Siemens Semiconductor Group |
GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization) |
|
| 4 | CFY25 |
Infineon |
HiRel X-Band GaAs MOSFET |
|
| 5 | CFY25-17 |
Siemens Semiconductor Group |
GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization) |
|