CFY25-23 - Siemens Semiconductor Group

CFY25-23 GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization)

GaAs FET q q q q q CFY 25 Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization ESD: Electrostatic discharge sensitive device, observe handling precautions! Type CFY 25-17 CFY 25-20 CFY 25-23 Marking C5 C6 C7 Ordering Code (tape and reel) Q62703-F106 Q62703-F107 Q62703-F108 Pin Configuration 1 2 3 4 D S G S Pac.

Features

VDS = 3 V, VGS = 0 Pinch-off voltage ID = 1 mA, VDS = 3 V Gate leakage current ID = 15 mA, VDS = 3 V Transconductance ID = 15 mA, VDS = 3 V Noise figure IDS = 15 mA, VDS = 3 V, f = 12 GHz CFY 25-17 CFY 25-20 CFY 25-23 Associated gain IDS = 15 mA, VDS = 3 V, f = 12 GHz CFY 25-17 CFY 25-20 CFY 25-23 Symbol min. IDSS Vp IG gm F
  –
  –
  – Ga 9 8.5 8.5 9.5 9 9
  –
  –
  – 1.6 1.9 2.2 1.7 2.0 2.3 15
  – 0.3
  – 30 Values typ. 30
  – 1.0 0.1 40 max. 60
  – 3.0 2
  – mA V µA Unit mS dB Semiconductor Group 2 CFY 25 Total power dissipation Ptot = f (TS; TA
*)
* Package mounted on alumina Output characteristics ID = f.