Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
CFY25... HiRel X-Band GaAs General Purpose MESFET • HiRel discrete and Microwave semiconductor • For professional pre- and driver- amplifiers • For frequencies from 500MHz to 20GHz • Hermetically sealed microwave package • Low noise figure, high gain, moderate power • ESA Space Qualification Expected 1998 ESA/SCC Detail Spec. No.: 5613/008 Type Variante No..
.
CFY25 - Siemens Semiconductor Group
GaAs FET q q q q q CFY 25 Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metalli.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | CFY25-17 |
Siemens Semiconductor Group |
GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization) |
|
| 2 | CFY25-20 |
Siemens Semiconductor Group |
GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization) |
|
| 3 | CFY25-20 |
Infineon |
HiRel X-Band GaAs MOSFET |
|
| 4 | CFY25-20P |
Infineon |
HiRel X-Band GaAs MOSFET |
|
| 5 | CFY25-23 |
Siemens Semiconductor Group |
GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization) |
|
| 6 | CFY25-23 |
Infineon |
HiRel X-Band GaAs MOSFET |
|
| 7 | CFY25-23P |
Infineon |
HiRel X-Band GaAs MOSFET |
|
| 8 | CFY25-P |
Infineon |
HiRel X-Band GaAs MOSFET |
|
| 9 | CFY27 |
Infineon Technologies AG |
HiRel Ku-Band GaAs General Purpose MESFET |
|
| 10 | CFY27-38 |
Infineon Technologies AG |
HiRel Ku-Band GaAs General Purpose MESFET |
|
| 11 | CFY27-P |
Infineon Technologies AG |
HiRel Ku-Band GaAs General Purpose MESFET |
|
| 12 | CFY30 |
Siemens Semiconductor Group |
GaAs FET (Low noise Fmin = 1.4 dB @ 4 GHz High gain 11.5 dB typ. @ 4 GHz) |
|