CFY30 - Siemens Semiconductor Group

CFY30 GaAs FET (Low noise Fmin = 1.4 dB @ 4 GHz High gain 11.5 dB typ. @ 4 GHz)

GaAs FET CFY 30 ________________________________________________________________________________________________________ Datasheet * Low noise ( Fmin = 1.4 dB @ 4 GHz ) * High gain ( 11.5 dB typ. @ 4 GHz ) * For oscillators up to 12 GHz * For amplifiers up to 6 GHz * Ion implanted planar structure * Chip all gold metallization * Chip nitride passivation E.

Features

he soldering point to the PCB. Siemens Aktiengesellschaft pg. 1/6 11.01.1996 HL EH PD 21 GaAs FET CFY 30 ________________________________________________________________________________________________________ Electrical characteristics at TA = 25°C, unless otherwise specified Characteristics Drain-source saturation current V = 3.5 V, DS Symbol min typ max Unit mA V =0V GS IDSS VGS(P) gm IG F 20 50 80 V Pinch-off voltage V = 3.5 V DS I = 1 mA D -0.5 -1.3 -4.0 mS Transconductance V = 3.5 V DS I = 15 mA D 20 30 µA Gate leakage current V = 3.5 V DS I = 15 mA D - 0..