CFY35-23 - Siemens Semiconductor Group

CFY35-23 GaAs FET (Low noise High gain For low-noise front end amplifiers For DBS down converters)

GaAs FET CFY 35 ________________________________________________________________________________________________________ Datasheet * Low noise * High gain * For low-noise front end amplifiers * For DBS down converters ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering code (tape and reel) Pin Configura.

Features

l characteristics at TA = 25°C, unless otherwise specified CFY 35 ________________________________________________________________________________________________________ Characteristics Drain-source saturation current V = 2.5 V, DS Symbol min typ max Unit mA V =0V GS IDSS VGS(P) gm IG F 10 -0.2 25 45 V Pinch-off voltage V = 2.5 V DS I = 1 mA D -1.2 -2.5 mS Transconductance V = 2.5 V DS I = 10 mA D 20 30 µA Gate leakage current V = 2.5 V DS I = 10 mA D - 0.1 2 dB Noise figure V = 2.5 V DS I = 10 mA D f = 12 GHz CFY 35-20 CFY 35-23 - 1.9 2.2 2.0 2.3 dB Associat.