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CFY30 |
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| Part Number | CFY30 |
| Manufacturer | Siemens Semiconductor Group |
| Description | GaAs FET CFY 30 ________________________________________________________________________________________________________ Datasheet * Low noise ( Fmin = 1.4 dB @ 4 GHz ) * High gain ( 11.5 dB typ. @... |
| Features |
he soldering point to the PCB.
Siemens Aktiengesellschaft
pg. 1/6
11.01.1996 HL EH PD 21
GaAs FET
CFY 30
________________________________________________________________________________________________________
Electrical characteristics at TA = 25°C, unless otherwise specified
Characteristics Drain-source saturation current
V = 3.5 V,
DS
Symbol
min
typ
max
Unit mA
V =0V
GS
IDSS VGS(P) gm IG F
20
50
80 V
Pinch-off voltage
V = 3.5 V
DS
I = 1 mA
D
-0.5
-1.3
-4.0 mS
Transconductance
V = 3.5 V
DS
I = 15 mA
D
20
30
µA
Gate leakage current
V = 3.5 V
DS
I = 15 mA
D
-
0.... |
| Document |
 CFY30 Data Sheet
PDF 46.65KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | CFY35 |
Siemens Semiconductor Group |
GaAs FET (Low noise High gain For low-noise front end amplifiers For DBS down converters) |
|
| 2 | CFY35-20 |
Siemens Semiconductor Group |
GaAs FET (Low noise High gain For low-noise front end amplifiers For DBS down converters) |
|
| 3 | CFY35-23 |
Siemens Semiconductor Group |
GaAs FET (Low noise High gain For low-noise front end amplifiers For DBS down converters) |
|
| 4 | CFY25 |
Siemens Semiconductor Group |
GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization) |
|
| 5 | CFY25 |
Infineon |
HiRel X-Band GaAs MOSFET |
|