P-Channel Enhancement Mode Field Effect Transistor FEATURES -30V, -28A, RDS(ON) = 32mΩ RDS(ON) = 50mΩ @VGS = -10V. @VGS = -4.5V. CED3301/CEU3301 Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. D D G S CEU SERIES TO-252(D-PAK) G D G S CED SERIES TO-2.
-30V, -28A, RDS(ON) = 32mΩ RDS(ON) = 50mΩ @VGS = -10V. @VGS = -4.5V. CED3301/CEU3301 Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. D D G S CEU SERIES TO-252(D-PAK) G D G S CED SERIES TO-251(I-PAK) S ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Tc = 25 C unless otherwise noted Symbol Limit VDS VGS ID IDM PD TJ,Tstg -30 Units V V A A W W/ C C ±20 -28 -100 42 0.33 -55 to 150 Maximum Power Dissipation @.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | CEU331J |
Mallory |
Disc Ceramic Capacitors | |
2 | CEU301J |
Mallory |
Disc Ceramic Capacitors | |
3 | CEU3055L |
Chino-Excel Technology |
N-Channel Enhancement Mode Field Effect Transistor | |
4 | CEU3055L3 |
Chino-Excel Technology |
Dual N-Channel Enhancement Mode Field Effect Transistor | |
5 | CEU3055L5 |
Chino-Excel Technology |
N-Channel Enhancement Mode Field Effect Transistor | |
6 | CEU3060 |
Chino-Excel Technology |
N-Channel MOSFET | |
7 | CEU3070 |
CET |
N-Channel MOSFET | |
8 | CEU3080 |
CET |
N-Channel MOSFET | |
9 | CEU3089 |
CET |
Dual-Channel MOSFET | |
10 | CEU3099 |
CET |
Dual Enhancement Mode Field Effect Transistor | |
11 | CEU30N08 |
CET |
N-Channel MOSFET | |
12 | CEU30P10 |
CET |
P-Channel MOSFET |