CEU3099 Dual Enhancement Mode Field Effect Transistor (N and P Channel) FEATURES 30V , 26A , RDS(ON) = 10mΩ @VGS = 10V. RDS(ON) = 17mΩ @VGS = 4.5V. -30V , -19A , RDS(ON) = 20mΩ @VGS = 10V. RDS(ON) = 30mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). G1 High power and current handing capability. Lead free product is acquired. TO-25.
30V , 26A , RDS(ON) = 10mΩ @VGS = 10V. RDS(ON) = 17mΩ @VGS = 4.5V. -30V , -19A , RDS(ON) = 20mΩ @VGS = 10V. RDS(ON) = 30mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). G1 High power and current handing capability. Lead free product is acquired. TO-252-4L package. S1 G1 S2 G2 D1/D2 CEU SERIES TO-252-4L D1/D2 G2 S1 S2 ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol N-Channel P-Channel Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous e@ TC = 25 C Drain Current-Continuous e@ TC = 100 C Drain Current-Pulsed a Maximum .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | CEU301J |
Mallory |
Disc Ceramic Capacitors | |
2 | CEU3055L |
Chino-Excel Technology |
N-Channel Enhancement Mode Field Effect Transistor | |
3 | CEU3055L3 |
Chino-Excel Technology |
Dual N-Channel Enhancement Mode Field Effect Transistor | |
4 | CEU3055L5 |
Chino-Excel Technology |
N-Channel Enhancement Mode Field Effect Transistor | |
5 | CEU3060 |
Chino-Excel Technology |
N-Channel MOSFET | |
6 | CEU3070 |
CET |
N-Channel MOSFET | |
7 | CEU3080 |
CET |
N-Channel MOSFET | |
8 | CEU3089 |
CET |
Dual-Channel MOSFET | |
9 | CEU30N08 |
CET |
N-Channel MOSFET | |
10 | CEU30P10 |
CET |
P-Channel MOSFET | |
11 | CEU3100 |
CET |
N-Channel MOSFET | |
12 | CEU3120 |
CET |
N-Channel MOSFET |