CEU30N08 - CET

CEU30N08 N-Channel MOSFET

CED30N08/CEU30N08 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 80V, 30A, RDS(ON) = 30mΩ @VGS = 10V. RDS(ON) = 38mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. TO-251 & TO-252 package. D G S CEU SERIES TO-252(D-PAK) G DS CED.

Features

80V, 30A, RDS(ON) = 30mΩ @VGS = 10V. RDS(ON) = 38mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. TO-251 & TO-252 package. D G S CEU SERIES TO-252(D-PAK) G DS CED SERIES TO-251(I-PAK) G D S ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @ TC = 25 C @ TC = 100 C Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C Single Pulsed Avalanche Energy e Single Pulsed Avalanche Current e Operating and Store Temperat.