CED30P10/CEU30P10 P-Channel Enhancement Mode Field Effect Transistor FEATURES -100V, -30A, RDS(ON) = 76mΩ @VGS = -10V. RDS(ON) = 92mΩ @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. D D G S CEU SERIES TO-252(D-PAK) G DS CED SERIES TO-2.
-100V, -30A, RDS(ON) = 76mΩ @VGS = -10V. RDS(ON) = 92mΩ @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. D D G S CEU SERIES TO-252(D-PAK) G DS CED SERIES TO-251(I-PAK) G S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C VDS VGS ID IDM PD -100 ±20 -30 -120 150 1.2 Operating and Store Tem.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | CEU301J |
Mallory |
Disc Ceramic Capacitors | |
2 | CEU3055L |
Chino-Excel Technology |
N-Channel Enhancement Mode Field Effect Transistor | |
3 | CEU3055L3 |
Chino-Excel Technology |
Dual N-Channel Enhancement Mode Field Effect Transistor | |
4 | CEU3055L5 |
Chino-Excel Technology |
N-Channel Enhancement Mode Field Effect Transistor | |
5 | CEU3060 |
Chino-Excel Technology |
N-Channel MOSFET | |
6 | CEU3070 |
CET |
N-Channel MOSFET | |
7 | CEU3080 |
CET |
N-Channel MOSFET | |
8 | CEU3089 |
CET |
Dual-Channel MOSFET | |
9 | CEU3099 |
CET |
Dual Enhancement Mode Field Effect Transistor | |
10 | CEU30N08 |
CET |
N-Channel MOSFET | |
11 | CEU3100 |
CET |
N-Channel MOSFET | |
12 | CEU3120 |
CET |
N-Channel MOSFET |