CED3080/CEU3080 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 30V, 57A, RDS(ON) = 10mΩ @VGS = 10V. RDS(ON) = 14mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. D D G S CEU SERIES TO-252(D-PAK) G DS CED SERI.
30V, 57A, RDS(ON) = 10mΩ @VGS = 10V. RDS(ON) = 14mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. D D G S CEU SERIES TO-252(D-PAK) G DS CED SERIES TO-251(I-PAK) G S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C VDS VGS ID IDM PD 30 ±20 57 200 52 0.42 Operating and Store Temperature .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | CEU3089 |
CET |
Dual-Channel MOSFET | |
2 | CEU301J |
Mallory |
Disc Ceramic Capacitors | |
3 | CEU3055L |
Chino-Excel Technology |
N-Channel Enhancement Mode Field Effect Transistor | |
4 | CEU3055L3 |
Chino-Excel Technology |
Dual N-Channel Enhancement Mode Field Effect Transistor | |
5 | CEU3055L5 |
Chino-Excel Technology |
N-Channel Enhancement Mode Field Effect Transistor | |
6 | CEU3060 |
Chino-Excel Technology |
N-Channel MOSFET | |
7 | CEU3070 |
CET |
N-Channel MOSFET | |
8 | CEU3099 |
CET |
Dual Enhancement Mode Field Effect Transistor | |
9 | CEU30N08 |
CET |
N-Channel MOSFET | |
10 | CEU30P10 |
CET |
P-Channel MOSFET | |
11 | CEU3100 |
CET |
N-Channel MOSFET | |
12 | CEU3120 |
CET |
N-Channel MOSFET |