CEM2239 - CET

CEM2239 Dual-Channel MOSFET

CEM2239 Dual Enhancement Mode Field Effect Transistor (N and P Channel) PRELIMINARY FEATURES 20V, 7.6A, RDS(ON) = 22mΩ @VGS = 4.5V. RDS(ON) = 32mΩ @VGS = 2.5V. -20V, -5.9A, RDS(ON) = 35mΩ @VGS = -4.5V. RDS(ON) = 50mΩ @VGS = -2.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquire.

Features

20V, 7.6A, RDS(ON) = 22mΩ @VGS = 4.5V. RDS(ON) = 32mΩ @VGS = 2.5V. -20V, -5.9A, RDS(ON) = 35mΩ @VGS = -4.5V. RDS(ON) = 50mΩ @VGS = -2.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. Surface mount Package. SO-8 1 D1 D1 D2 D2 87 65 1234 S1 G1 S2 G2 5 ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol N-Channel Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a VDS 20 VGS ±12 ID 7.6 IDM 30 P-Channel -20 ±12 -5.9 25 Maximum Power Dissipati.