CEM2192 - CET

CEM2192 Dual N-Channel MOSFET

CEM2192 Dual N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 20V, 8A, RDS(ON) = 24mΩ @VGS = 4.5V. RDS(ON) = 35mΩ @VGS = 2.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. Surface mount Package. DD D D 8 7 65 SO-8 1 1 234 S SSG ABSOLUTE MA.

Features

20V, 8A, RDS(ON) = 24mΩ @VGS = 4.5V. RDS(ON) = 35mΩ @VGS = 2.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. Surface mount Package. DD D D 8 7 65 SO-8 1 1 234 S SSG ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage VDS 20 VGS ±12 Drain Current-Continuous Drain Current-Pulsed a ID 8 IDM 32 Maximum Power Dissipation PD 2.5 Operating and Store Temperature Range TJ,Tstg -55 to 150 Thermal Characteristics Parameter Therm.