CEM2163 P-Channel Enhancement Mode Field Effect Transistor FEATURES -20V, -8.9A, RDS(ON) = 20mΩ @VGS = -4.5V. RDS(ON) = 30mΩ @VGS = -2.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. Surface mount Package. DD D D 8 7 65 SO-8 1 1 234 S SSG ABSOLUTE MAXIMUM RATINGS TA =.
-20V, -8.9A, RDS(ON) = 20mΩ @VGS = -4.5V. RDS(ON) = 30mΩ @VGS = -2.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. Surface mount Package. DD D D 8 7 65 SO-8 1 1 234 S SSG ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a VDS -20 VGS ±12 ID -8.9 IDM -36 Maximum Power Dissipation PD 2.5 Operating and Store Temperature Range TJ,Tstg -55 to 150 Thermal Characteristics Parameter T.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | CEM2108 |
CET |
Dual N-Channel Enhancement Mode Field Effect Transistor | |
2 | CEM2108E |
CET |
Dual N-Channel MOSFET | |
3 | CEM2133 |
CET |
P-Channel Enhancement Mode Field Effect Transistor | |
4 | CEM2182 |
CET |
N-Channel MOSFET | |
5 | CEM2187 |
CET |
P-Channel Enhancement Mode Field Effect Transistor | |
6 | CEM2192 |
CET |
Dual N-Channel MOSFET | |
7 | CEM2005 |
Chino-Excel Technology |
Dual Enhancement Mode Field Effect Transistor(N and Channel) | |
8 | CEM2030 |
CET |
Dual-Channel MOSFET | |
9 | CEM2030A |
Chino-Excel Technology |
Dual Enhancement Mode Field Effect Transistor(N and P Channel) | |
10 | CEM2082 |
CET |
Dual N-Channel Enhancement Mode Field Effect Transistor | |
11 | CEM2239 |
CET |
Dual-Channel MOSFET | |
12 | CEM2281 |
CET |
P-Channel MOSFET |