CEM2030 - CET

CEM2030 Dual-Channel MOSFET

CEM2030 Dual Enhancement Mode Field Effect Transistor (N and P Channel) FEATURES 20V, 6A, RDS(ON) = 30mΩ @VGS = 4.5V. RDS(ON) = 40mΩ @VGS = 2.5V. -20V, -4.3A, RDS(ON) = 90mΩ @VGS = -4.5V. RDS(ON) = 120mΩ @VGS = -2.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. Surface mo.

Features

20V, 6A, RDS(ON) = 30mΩ @VGS = 4.5V. RDS(ON) = 40mΩ @VGS = 2.5V. -20V, -4.3A, RDS(ON) = 90mΩ @VGS = -4.5V. RDS(ON) = 120mΩ @VGS = -2.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. Surface mount Package. SO-8 1 D1 D1 D2 D2 87 65 1234 S1 G1 S2 G2 5 ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol N-Channel Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a VDS 20 VGS ±12 ID 6 IDM 35 P-Channel -20 ±12 -4.3 -17 Maximum Power Dissipation.