CEM2108 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES 20V, 9.5A, RDS(ON) = 14mΩ @VGS = 4.5V. RDS(ON) = 20mΩ @VGS = 2.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. Surface mount Package. D1 8 D1 7 D2 6 D2 5 5 SO-8 1 1 S1 2 G1 3 S2 4 G2 ABSOLUTE MA.
20V, 9.5A, RDS(ON) = 14mΩ @VGS = 4.5V. RDS(ON) = 20mΩ @VGS = 2.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. Surface mount Package. D1 8 D1 7 D2 6 D2 5 5 SO-8 1 1 S1 2 G1 3 S2 4 G2 ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a TA = 25 C unless otherwise noted Symbol VDS VGS ID IDM PD TJ,Tstg Limit 20 Units V V A A W C ±12 9.5 35 2.0 -55 to 150 Maximum Power Dissipation Operating and Store Temperature Range Thermal Chara.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | CEM2108E |
CET |
Dual N-Channel MOSFET | |
2 | CEM2133 |
CET |
P-Channel Enhancement Mode Field Effect Transistor | |
3 | CEM2163 |
CET |
P-Channel MOSFET | |
4 | CEM2182 |
CET |
N-Channel MOSFET | |
5 | CEM2187 |
CET |
P-Channel Enhancement Mode Field Effect Transistor | |
6 | CEM2192 |
CET |
Dual N-Channel MOSFET | |
7 | CEM2005 |
Chino-Excel Technology |
Dual Enhancement Mode Field Effect Transistor(N and Channel) | |
8 | CEM2030 |
CET |
Dual-Channel MOSFET | |
9 | CEM2030A |
Chino-Excel Technology |
Dual Enhancement Mode Field Effect Transistor(N and P Channel) | |
10 | CEM2082 |
CET |
Dual N-Channel Enhancement Mode Field Effect Transistor | |
11 | CEM2239 |
CET |
Dual-Channel MOSFET | |
12 | CEM2281 |
CET |
P-Channel MOSFET |