2SC5469 Silicon NPN Triple Diffused Character Display Horizntal Deflection Output Features • High breakdown voltage VCBO = 1500 V • High speed switching tf = 0.15 µsec (typ.) at fH = 64kHz Outline 3rd. Edition December 1997 Target Specification Downloaded from Elcodis.com electronic components distributor 2SC5469 Absolute Maximum Ratings (Ta = 25°C) It.
• High breakdown voltage VCBO = 1500 V
• High speed switching tf = 0.15 µsec (typ.) at fH = 64kHz
Outline
3rd. Edition December 1997 Target Specification
Downloaded from Elcodis.com electronic components distributor
2SC5469
Absolute Maximum Ratings (Ta = 25°C)
Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Note: 1. Value at Tc = 25°C
Symbol VCBO VCEO VEBO IC ic(peak) P Note1
C
Tj Tstg
Ratings 1500 700 6 15 30 125 150
–55 to +150
Unit V V V A.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | C5460 |
Toshiba |
2SC5460 | |
2 | C5460 |
Hamamatsu Corporation |
APD module | |
3 | C5461 |
Hitachi |
Silicon NPN Transistor | |
4 | C5462 |
Hitachi |
Silicon NPN Transistor | |
5 | C5463 |
Toshiba |
2SC5463 | |
6 | C5464 |
Toshiba |
2SC5464 | |
7 | C5465 |
Toshiba |
2SC5465 | |
8 | C5466 |
Toshiba |
2SC5466 | |
9 | C5468 |
Toshiba |
2SC5468 | |
10 | C5404 |
Toshiba Semiconductor |
2SC5404 | |
11 | C5406 |
Panasonic |
Silicon NPN triple diffusion mesa type Power Transistors | |
12 | C5406A |
Panasonic |
Silicon NPN triple diffusion mesa type Power Transistors |