C5406A - Panasonic

C5406A Silicon NPN triple diffusion mesa type Power Transistors

Power Transistors 2SC5406, 2SC5406A Silicon NPN triple diffusion mesa type For horizontal deflection output Unit: mm s Features q High breakdown voltage, and high reliability through the use of a glass passivation layer q High-speed switching q Wide area of safe operation (ASO) s Absolute Maximum Ratings (TC=25˚C) Parameter Symbol Ratings Collector t.

Features

q High breakdown voltage, and high reliability through the use of a glass passivation layer q High-speed switching q Wide area of safe operation (ASO) s Absolute Maximum Ratings (TC=25˚C) Parameter Symbol Ratings Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power TC=25°C dissipation Ta=25°C VCBO VCES VCEO VEBO ICP IC IB PC 1500 1500 600 5 20 14 8 100 3 Junction temperature Storage temperature Tj 150 Tstg
  –55 to +150 Unit V V V V A A A W ˚C ˚C 3.3±0.3 0.7±0.1 4.5 15.5±0.5 φ3.2±0.