2SC5462 Silicon NPN Triple Diffused Character Display Horizontal Deflection Output Features • High breakdown voltage VCBO = 1500 V • High speed switching tf = 0.15 µsec(typ.) at fH=64kHz • Isolated package TO–3PFM Outline TO–3PFM ADE-208-671 (Z) 1st. Edition Oct. 1, 1998 1 2 3 1. Base 2. Collector 3. Emitter 2SC5462 Absolute Maximum Ratings (Ta = 25°C).
• High breakdown voltage VCBO = 1500 V
• High speed switching tf = 0.15 µsec(typ.) at fH=64kHz
• Isolated package TO
–3PFM
Outline
TO
–3PFM
ADE-208-671 (Z) 1st. Edition Oct. 1, 1998
1 2 3
1. Base 2. Collector 3. Emitter
2SC5462
Absolute Maximum Ratings (Ta = 25°C)
Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Note: 1. Value at Tc = 25°C
Symbol VCBO VCEO VEBO IC ic(peak) P Note1
C
Tj Tstg
Ratings 1500 700 6 20 40 50 150
–55 to +150
Unit V V V.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | C5460 |
Toshiba |
2SC5460 | |
2 | C5460 |
Hamamatsu Corporation |
APD module | |
3 | C5461 |
Hitachi |
Silicon NPN Transistor | |
4 | C5463 |
Toshiba |
2SC5463 | |
5 | C5464 |
Toshiba |
2SC5464 | |
6 | C5465 |
Toshiba |
2SC5465 | |
7 | C5466 |
Toshiba |
2SC5466 | |
8 | C5468 |
Toshiba |
2SC5468 | |
9 | C5469 |
Hitachi |
Silicon NPN Transistor | |
10 | C5404 |
Toshiba Semiconductor |
2SC5404 | |
11 | C5406 |
Panasonic |
Silicon NPN triple diffusion mesa type Power Transistors | |
12 | C5406A |
Panasonic |
Silicon NPN triple diffusion mesa type Power Transistors |