C5466 - Toshiba

C5466 2SC5466

TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5466 Dynamic Focus Applications High Voltage Switching Applications High Voltage Amplifier Applications 2SC5466 Unit: mm • High voltage: VCEO = 800 V Absolute Maximum Ratings (Tc = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Co.

Features

ign the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 http://store.iiic.cc/ 2006-11-10 Electrical Characteristics (Tc = 25°C) Characteristics Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance Symbol ICBO IEBO hFE VCE (sat) VBE (sat) fT Cob Test Condition VCB = 640 .