TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5464 2SC5464 VHF~UHF Band Low Noise Amplifier Applications • Low noise figure, high gain. • NF = 1.1dB, |S21e|2 = 12dB (f = 1 GHz) Absolute Maximum Ratings (Ta = 25°C) Unit: mm Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collec.
tor Reliability Handbook (“Handling Weight: 2.4 mg (typ.) Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Microwave Characteristics (Ta = 25°C) Characteristics Transition frequency Insertion gain Noise figure Symbol Test Condition fT ⎪S21e⎪2 (1) ⎪S21e⎪2 (2) NF (1) NF (2) VCE = 8 V, IC = 15 mA VCE = 8 V, IC = 15 mA, f = 500 MHz VCE = 8 V, IC = 15 mA, f = 1 GHz VCE = 8 V, IC = 5 mA, f = 500 MHz VCE = 8 V, IC = 5 mA, f = 1 GHz Electrical Characteristics (Ta = 25°C) Min Typ. Max Unit 5 7 ⎯ GHz .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | C5460 |
Toshiba |
2SC5460 | |
2 | C5460 |
Hamamatsu Corporation |
APD module | |
3 | C5461 |
Hitachi |
Silicon NPN Transistor | |
4 | C5462 |
Hitachi |
Silicon NPN Transistor | |
5 | C5463 |
Toshiba |
2SC5463 | |
6 | C5465 |
Toshiba |
2SC5465 | |
7 | C5466 |
Toshiba |
2SC5466 | |
8 | C5468 |
Toshiba |
2SC5468 | |
9 | C5469 |
Hitachi |
Silicon NPN Transistor | |
10 | C5404 |
Toshiba Semiconductor |
2SC5404 | |
11 | C5406 |
Panasonic |
Silicon NPN triple diffusion mesa type Power Transistors | |
12 | C5406A |
Panasonic |
Silicon NPN triple diffusion mesa type Power Transistors |