C5358 - Toshiba

C5358 NPN Transistor

TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5358 Power Amplifier Applications 2SC5358 Unit: mm • High breakdown voltage: VCEO = 230 V • Complementary to 2SA1986 • Suitable for use in 80-W high fidelity audio amplifier’s output stage Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 230 V.

Features

the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Start of commercial production 1995-12 1 2013-11-01 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter voltage Transition frequ.