C5353 - Toshiba

C5353 Silicon NPN Transistor

2SC5353 TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT process) 2SC5353 Switching Regulator and High Voltage Switching Applications High-Speed DC-DC Converter Applications Unit: mm • • Excellent switching times: tr = 0.7 μs (max), tf = 0.5 μs (max) High collectors breakdown voltage: VCEO = 800 V Absolute Maximum Ratings (Tc = 25°C) Characterist.

Features

ng conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2006-11-10 Datasheet pdf - http://www.DataSheet4U.net/ 2SC5353 Electrical Characteristics (Tc = 25°C) Characteristics Collector cut-off current Emitter cut-off current Collector-base breakdown voltage Collector-emitter breakdown voltag.