C5354 - Toshiba Semiconductor

C5354 2SC5354

TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5354 High-Speed and High-Voltage Switching Applications Switching Regulator Applications High-Speed DC-DC Converter Applications 2SC5354 Unit: mm • Excellent switching times: tr = 0.7 μs (max) tf = 0.5 μs (max) (IC = 2 A) • High breakdown voltage: VCEO = 800 V Absolute Maximum Ratings (Ta = 25°C) Cha.

Features

perating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Start of commercial production 1998-11 1 2013-11-01 Electrical Characteristics (Ta = 25°C) Characteristics Collector cut-off current Emitter cut-off current Collector-base breakdown voltage Collector-emitter breakdown voltage DC .