C5355 - Toshiba Semiconductor

C5355 2SC5355

2SC5355 TOSHIBA Transistor Silicon NPN Triple Diffused Mesa Type 2SC5355 High Voltage Switching Applications Switching Regulator Applications DC-DC Converter Applications • • • Excellent switching times: tr = 0.5 µs (max), tf = 0.3 µs (max) High collector breakdown voltage: VCEO = 400 V High DC current gain: hFE = 20 (min) Unit: mm Maximum Ratings (Ta = 25.

Features

age DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Rise time Symbol ICBO IEBO V (BR) CBO V (BR) CEO hFE (1) hFE (2) VCE (sat) VBE (sat) tr Test Condition VCB = 480 V, IE = 0 VEB = 7 V, IC = 0 IC = 1 mA, IE = 0 IC = 10 mA, IB = 0 VCE = 5 V, IC = 1 mA VCE = 5 V, IC = 0.5 A IC = 2 A, IB = 0.25 A IC = 2 A, IB = 0.25 A OUTPUT 100 Ω Min ― ― 600 400 12 20 ― ― ― Typ. ― ― ― ― ― ― ― ― ― Max 100 10 ― ― ― 65 1.0 1.3 0.5 V V Unit µA µA V V 20 µs INPUT IB1 IB2 IB1 IB2 Switching time Storage time tstg ― VCC ≈ 200 V ― 2.0 µs Fall time tf IB1 = 0.25 A, IB2 = −0.