C5356 - Toshiba

C5356 2SC5356

TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT process) 2SC5356 2SC5356 High Voltage Switching Applications Switching Regulator Applications DC-DC Converter Applications Unit: mm • Excellent switching times: tf = 0.5 μs (max) (IC = 1.2 A) • High collectors breakdown voltage: VCEO = 800 V • High DC current gain: hFE = 15 (min) (IC = 0.15 A) Abs.

Features

operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). JEDEC ― JEITA ― TOSHIBA 2-7B5A Weight: 0.36 g (typ.) JEDEC ― JEITA ― TOSHIBA 2-7B7A Weight: 0.36 g (typ.) 1 2006-11-10 Electrical Characteristics (Ta = 25°C) 2SC5356 Characteristics Collector cut-off current Emitter cut-off current Collector.