Ordering number:EN5126 NPN Triple Diffused Planar Silicon Transistor 2SC5238 Ultrahigh-Definition Color Display Horizontal Deflection Output Applications Features · High speed (tf=100ns typ). · High breakdown voltage (VCBO=1500V). · High reliability (Adoption of HVP process). · Adoption of MBIT process. Package Dimensions unit:mm 2111A [2SC5238] 20.0 5.0 .
· High speed (tf=100ns typ).
· High breakdown voltage (VCBO=1500V).
· High reliability (Adoption of HVP process).
· Adoption of MBIT process.
Package Dimensions
unit:mm 2111A
[2SC5238]
20.0 5.0
20.7 26.0 2.8 3.0
2.0
Specifications
1.75 2.9 1.2
12 3 5.45 5.45
0.6
5.45 5.45
1.0
3.1 1 : Base 2 : Collector 3 : Emitter SANYO : TO-3JML
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation
Symbol
VCBO VCEO VEBO
IC ICP PC
Junction Temperature Storage Tem.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | C5230 |
Sanyo |
2SC5230 | |
2 | C5231 |
Sanyo |
2SC5231 | |
3 | C5232 |
Toshiba |
2SC5232 | |
4 | C5233 |
Toshiba |
2SC5233 | |
5 | C5237 |
Hitachi |
2SC5237 | |
6 | C5239 |
Sanken electric |
2SC5239 | |
7 | C5200 |
Toshiba |
Silicon NPN Transistor | |
8 | C5200N |
Toshiba |
NPN Transistor | |
9 | C5201 |
Toshiba |
2SC5201 | |
10 | C5206 |
Hitachi |
Silicon NPN Transistor | |
11 | C5207A |
Hitachi Semiconductor |
Silicon NPN Transistor | |
12 | C520A |
ETC |
2SC520A |