TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC5233 General Purpose Amplifier Applications Switching and Muting Switch Application 2SC5233 Unit: mm • Low saturation voltage: VCE (sat) (1) = 15 mV (typ.) @IC = 10 mA/IB = 0.5 mA • Large collector current: IC = 500 mA (max) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating.
tage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Marking 1 2007-11-01 Electrical Characteristics (Ta = 25°C) Characteristics Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance Collector-emitter on re.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | C5230 |
Sanyo |
2SC5230 | |
2 | C5231 |
Sanyo |
2SC5231 | |
3 | C5232 |
Toshiba |
2SC5232 | |
4 | C5237 |
Hitachi |
2SC5237 | |
5 | C5238 |
Sanyo |
2SC5238 | |
6 | C5239 |
Sanken electric |
2SC5239 | |
7 | C5200 |
Toshiba |
Silicon NPN Transistor | |
8 | C5200N |
Toshiba |
NPN Transistor | |
9 | C5201 |
Toshiba |
2SC5201 | |
10 | C5206 |
Hitachi |
Silicon NPN Transistor | |
11 | C5207A |
Hitachi Semiconductor |
Silicon NPN Transistor | |
12 | C520A |
ETC |
2SC520A |