Ordering number:EN5046 NPN Epitaxial Planar Silicon Transistor 2SC5230 VHF to UHF Wide-Band Low-Noise Amplifier Applications Features · Low noise : NF=1.0dB typ (f=1GHz). · High gain : S21e2=10.5dB typ (f=1GHz). · High cutoff frequency : fT=6.5GHz typ. Package Dimensions unit:mm 2004B [2SC5230] 5.0 4.0 4.0 0.6 2.0 14.0 5.0 0.45 0.5 0.45 123 Specifi.
· Low noise : NF=1.0dB typ (f=1GHz).
· High gain : S21e2=10.5dB typ (f=1GHz).
· High cutoff frequency : fT=6.5GHz typ.
Package Dimensions
unit:mm
2004B
[2SC5230]
5.0 4.0
4.0
0.6 2.0 14.0 5.0
0.45 0.5
0.45
123
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature
Symbol
VCBO VCEO VEBO
IC PC Tj
Tstg
Electrical Characteristics at Ta = 25˚C
1.3
Conditions
Parameter
Symbol
Conditions
Collector Cutoff Current Emitter.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | C5231 |
Sanyo |
2SC5231 | |
2 | C5232 |
Toshiba |
2SC5232 | |
3 | C5233 |
Toshiba |
2SC5233 | |
4 | C5237 |
Hitachi |
2SC5237 | |
5 | C5238 |
Sanyo |
2SC5238 | |
6 | C5239 |
Sanken electric |
2SC5239 | |
7 | C5200 |
Toshiba |
Silicon NPN Transistor | |
8 | C5200N |
Toshiba |
NPN Transistor | |
9 | C5201 |
Toshiba |
2SC5201 | |
10 | C5206 |
Hitachi |
Silicon NPN Transistor | |
11 | C5207A |
Hitachi Semiconductor |
Silicon NPN Transistor | |
12 | C520A |
ETC |
2SC520A |