Ordering number:EN5036B NPN Epitaxial Planar Silicon Transistor 2SC5231 VHF to UHF Wide-Band Low-Noise Amplifier Applications Features · Low noise : NF=1.0dB typ (f=1GHz). · High gain : S21e2=12dB typ (f=1GHz). · High cutoff frequency : fT=7GHz typ. · Very small-sized package permiting 2SC5231- applied sets to be made small and slim. Package Dimensions .
· Low noise : NF=1.0dB typ (f=1GHz).
· High gain : S21e2=12dB typ (f=1GHz).
· High cutoff frequency : fT=7GHz typ.
· Very small-sized package permiting 2SC5231-
applied sets to be made small and slim.
Package Dimensions
unit:mm 2106A
[2SC5231]
0.3
0.75 0.6
0 to 0.1
0.4 0.8 0.4 1.6
0.1max
0.5 0.5 1.6
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature
Symbol
VCBO VCEO VEBO
IC PC Tj
Tstg
Electrical Characteristics a.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | C5230 |
Sanyo |
2SC5230 | |
2 | C5232 |
Toshiba |
2SC5232 | |
3 | C5233 |
Toshiba |
2SC5233 | |
4 | C5237 |
Hitachi |
2SC5237 | |
5 | C5238 |
Sanyo |
2SC5238 | |
6 | C5239 |
Sanken electric |
2SC5239 | |
7 | C5200 |
Toshiba |
Silicon NPN Transistor | |
8 | C5200N |
Toshiba |
NPN Transistor | |
9 | C5201 |
Toshiba |
2SC5201 | |
10 | C5206 |
Hitachi |
Silicon NPN Transistor | |
11 | C5207A |
Hitachi Semiconductor |
Silicon NPN Transistor | |
12 | C520A |
ETC |
2SC520A |