2SC5029 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC5029 Power Amplifier Applications Power Switching Applications Industrial Applications Unit: mm • • • • Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A, IB = 0.05 A) High collector power dissipation: PC = 1.3 W High-speed switching: tstg = 1.0 μs (typ.) Complementary to 2SA18.
s (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2006-11-10 2SC5029 Electrical Characteristics (Ta = 25°C) Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage Symbol ICBO IEBO V (BR) CEO hFE (1) DC current gain (Note) hFE (2) Collector-emitter sa.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | C502 |
Siemens |
8-Bit CMOS Microcontroller | |
2 | C502 |
Moxa |
PCI Dual Port Sync Board Manual | |
3 | C5020 |
Won-Top Electronics |
50A AVALANCHE AUTOMOTIVE CELL DIODE | |
4 | C5021CT-036 |
NEC |
UPC5021 | |
5 | C5022 |
Hitachi Semiconductor |
2SC5022 | |
6 | C5023 |
Hitachi |
2SC5023 | |
7 | C5023CS |
NEC |
UPC5023 | |
8 | C5024 |
Won-Top Electronics |
50A AVALANCHE AUTOMOTIVE CELL DIODE | |
9 | C5024 |
Hitachi Semiconductor |
Silicon NPN Epitaxial | |
10 | C5026 |
Panasonic Semiconductor |
2SC5026 | |
11 | C5027 |
Fairchild Semiconductor |
KSC5027 | |
12 | C5027 |
Toshiba Semiconductor |
2SC5027 |