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C5029 |
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| Part Number | C5029 |
| Manufacturer | Toshiba (https://www.toshiba.com/) Semiconductor |
| Description | 2SC5029 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC5029 Power Amplifier Applications Power Switching Applications Industrial Applications Unit: mm • • • • Low saturation voltage... |
| Features |
s (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
1
2006-11-10
2SC5029
Electrical Characteristics (Ta = 25°C)
Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage Symbol ICBO IEBO V (BR) CEO hFE (1) DC current gain (Note) hFE (2) Collector-emitter sa... |
| Document |
 C5029 Data Sheet
PDF 134.85KB |
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