C5022 - Hitachi Semiconductor

C5022 2SC5022

2SC5022 Silicon NPN Triple Diffused Application High voltage amplifier Features • High breakdown voltage V (BR)CEO = 1500 V Min Outline TO-220FM www.DataSheet.co.kr 12 3 1. Base 2. Collector 3. Emitter Datasheet pdf - http://www.DataSheet4U.net/ 2SC5022 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage E.

Features

• High breakdown voltage V (BR)CEO = 1500 V Min Outline TO-220FM www.DataSheet.co.kr 12 3 1. Base 2. Collector 3. Emitter Datasheet pdf - http://www.DataSheet4U.net/ 2SC5022 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC I C (peak) PC Tj Tstg Ratings 1500 1500 6 20 40 2 150
  –55 to +150 Unit V V V mA mA W °C °C Electrical Characteristics (Ta = 25°C) Item Collector cutoff current Col.