C5026 - Panasonic Semiconductor

C5026 2SC5026

Transistors 2SC5026 Silicon NPN epitaxial planar type For low-frequency output amplification Complementary to 2SA1890 4.5±0.1 1.6±0.2 Unit: mm 1.5±0.1 ■ Features 2.5±0.1 3˚ 4.0–+00..2205 • Low collector-emitter saturation voltage VCE(sat) • High collector-emitter voltage (Base open) VCEO • Mini Power type package, allowing downsizing of the equip- me.

Features

2.5±0.1 3˚ 4.0
  –+00..2205
• Low collector-emitter saturation voltage VCE(sat)
• High collector-emitter voltage (Base open) VCEO
• Mini Power type package, allowing downsizing of the equip- ment and automatic insertion through the tape packing and the magazine packing 1 0.4±0.08 1.5±0.1 23 0.5±0.08 3˚ 1.0
  –+00..21 0.4±0.04 /
■ Absolute Maximum Ratings Ta = 25°C e pe) Parameter Symbol Rating Unit 2.6±0.1 0.4 max. 45˚ 3.0±0.15 c e. d ty Collector-base voltage (Emitter open) VCBO 80 V n d stag tinue Collector-emitter voltage (Base open) VCEO 80 V a e cle con Emitter-base volta.