C5024 - Hitachi Semiconductor

C5024 Silicon NPN Epitaxial

2SC5024 Silicon NPN Epitaxial Application High frequency amplifier Features • Excellent high frequency characteristics fT = 300 MHz typ • High breakdown voltage and low output capacitance VCEO = 200 V, Cob = 5.0 pF typ • Suitable for wide band video amplifier • Complimentary pair of 2SA1889 TO–126FM 123 1. Emitter 2. Collector 3. Base Absolute Maximum R.

Features

• Excellent high frequency characteristics fT = 300 MHz typ
• High breakdown voltage and low output capacitance VCEO = 200 V, Cob = 5.0 pF typ
• Suitable for wide band video amplifier
• Complimentary pair of 2SA1889 TO
  –126FM 123 1. Emitter 2. Collector 3. Base Absolute Maximum Ratings (Ta = 25°C) Item Symbol Rating Unit ——————————————————————————————————————————— Collector to base voltage VCBO 200 V ——————————————————————————————————————————— Collector to emitter voltage VCEO 200 V ——————————————————————————————————————————— Emitter to base voltage VEBO 4 V ——————————————.