Transistors 2SC2636 Silicon NPN epitaxial planar type For high-frequency amplification/oscillation Unit: mm ■ Features (0.4) 6.9±0.1 (1.5) (1.5) 2.5±0.1 (1.0) (1.0) 3.5±0.1 4.5±0.1 • High transition frequency fT R 0.9 • M type package allowing easy automatic and manual insertion as R 0.7 well as stand-alone fixing to the printed circuit board .
(0.4)
6.9±0.1 (1.5)
(1.5)
2.5±0.1 (1.0)
(1.0)
3.5±0.1
4.5±0.1
• High transition frequency fT
R 0.9
• M type package allowing easy automatic and manual insertion as
R 0.7
well as stand-alone fixing to the printed circuit board
4.1±0.2
■ Absolute Maximum Ratings Ta = 25°C
/ Parameter
Symbol Rating
Unit
1.0±0.1
2.4±0.2
(0.85) 0.55±0.1
0.45±0.05
2.0±0.2
e ) Collector-base voltage (Emitter open) VCBO
30
1.25±0.05
V
c type Collector-emitter voltage (Base open) VCEO
20
V
n d ge. ed Emitter-base voltage (Collector open) VEBO
3
V
le sta ntinu Collector current
IC
50
m.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | C2630 |
Mitsubishi Electric Semiconductor |
2SC2630 | |
2 | C2631 |
Panasonic |
Silicon NPN Transistor | |
3 | C2632 |
Panasonic Semiconductor |
2SC2632 | |
4 | C2633 |
Panasonic |
2SC2633 | |
5 | C2634 |
Panasonic Semiconductor |
2SC2634 | |
6 | C2610 |
Renesas |
2SC2610 | |
7 | C2611 |
Hitachi Semiconductor |
2SC2611 | |
8 | C2611 |
Jiangsu Changjiang Electronics |
TRANSISTOR | |
9 | C2611 |
TRANSYS Electronics |
Plastic-Encapsulated Transistors | |
10 | C2612 |
Hitachi Semiconductor |
2SC2612 | |
11 | C2615 |
SavantIC |
2SC2615 | |
12 | C2621 |
Sanyo |
2SC2621 |