C2612 - Hitachi Semiconductor

C2612 2SC2612

2SC2612 Silicon NPN Triple Diffused Application High voltage, high speed and high power switching Outline TO-220AB 1 23 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Base current Collector power dissipation Junction temperature Storage temp.

Features

7 — — — — — — — — — — — — — 1.2 — Max Unit —V —V —V 100 µA 100 µA — — 1.0 V 1.5 V 1.0 µs 2.5 µs 1.0 µs Test conditions IC = 0.2 A, RBE = ∞, L = 100 mH IC = 3 A, IB1 =
  –IB2 = 0.6 A VBE =
  –5 V, L = 180 µH, Clamped IE = 10 mA, IC = 0 VCB = 400 V, IE = 0 VCE = 350 V, RBE = ∞ VCE = 5 V, IC = 1.5 A
*1 VCE = 5 V, IC = 3.0 A
*1 IC = 1.5 A, IB = 0.3 A
*1 IC = 1.5 A, IB = 0.3 A
*1 IC = 3 A, IB1 =
  –IB2 = 0.6 A, VCC ≅ 150 V Collector power dissipation PC (W) Collector current IC (A) Maximum Collector Dissipation Curve 45 30 15 0 50 100 150 Case temperature TC (°C) 2550µs2µ5s0 1µPsmWsD=C1O0=pme2sr5a°tCi.