·With TO-247 package ·High voltage,high speed APPLICATIONS ·For high voltage,high speed and high power switching applications www.DataSheet4U.com PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-247) and symbol DESCRIPTION Absolute maximum ratings(Tc=25 ) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector.
ollector cut-off current Emitter cut-off current DC current gain DC current gain CONDITIONS IC=0.2A; IB=0 IE=10mA; IC=0 IC=4A ;IB=0.8A IC=4A ;IB=0.8A VCB=400V; IE=0 VEB=5V; IC=0 IC=4A ; VCE=5V IC=8A ; VCE=5V 15 7 MIN 400 7 1.0 1.5 0.1 0.1 TYP. MAX UNIT V V V V mA mA SYMBOL VCEO(SUS) www.DataSheet4U.com V (BR)EBO VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC2615 www.DataSheet4U.com Fig.2 Outline dimensions 3 .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | C2610 |
Renesas |
2SC2610 | |
2 | C2611 |
Hitachi Semiconductor |
2SC2611 | |
3 | C2611 |
Jiangsu Changjiang Electronics |
TRANSISTOR | |
4 | C2611 |
TRANSYS Electronics |
Plastic-Encapsulated Transistors | |
5 | C2612 |
Hitachi Semiconductor |
2SC2612 | |
6 | C2621 |
Sanyo |
2SC2621 | |
7 | C2625 |
Fuji |
TRIPLE DIFFUSED PLANER TRANSISTOR | |
8 | C2625 |
Mospec Semiconductor |
2SC2625 | |
9 | C2629 |
Mitsubishi |
2SC2629 | |
10 | C2630 |
Mitsubishi Electric Semiconductor |
2SC2630 | |
11 | C2631 |
Panasonic |
Silicon NPN Transistor | |
12 | C2632 |
Panasonic Semiconductor |
2SC2632 |