C2632 - Panasonic Semiconductor

C2632 2SC2632

Transistors 2SC2632 Silicon NPN epitaxial planar type For low-frequency high breakdown voltage amplification Complementary to 2SA1124 5.9±0.2 Unit: mm 4.9±0.2 8.6±0.2 ■ Features • Satisfactory linearity of forward current transfer ratio hFE 13.5±0.5 0.7–+00..23 • High collector-emitter voltage (Base open) VCEO 0.7±0.1 • Small collector output capac.

Features

• Satisfactory linearity of forward current transfer ratio hFE 13.5±0.5 0.7
  –+00..23
• High collector-emitter voltage (Base open) VCEO 0.7±0.1
• Small collector output capacitance (Common base, input open cir- cuited) Cob /
■ Absolute Maximum Ratings Ta = 25°C e Parameter Symbol Rating Unit c type) Collector-base voltage (Emitter open) VCBO 150 V n d ge. ed Collector-emitter voltage (Base open) VCEO 150 (3.2) V sta tinu Emitter-base voltage (Collector open) VEBO 5 V a e cycle iscon Collector current IC 50 mA life d, d Peak collector current ICP 100 mA n u duct type .