C2634 - Panasonic Semiconductor

C2634 2SC2634

Transistors 2SC2634 Silicon NPN epitaxial planar type For low-frequency and low-noise amplification Complementary to 2SA1127 5.0±0.2 Unit: mm 4.0±0.2 5.1±0.2 ■ Features • Low noise voltage NV • High forward current transfer ratio hFE 0.7±0.1 ■ Absolute Maximum Ratings Ta = 25°C 0.7±0.2 12.9±0.5 / Parameter Symbol Rating Unit e ) Collector-base .

Features

• Low noise voltage NV
• High forward current transfer ratio hFE 0.7±0.1
■ Absolute Maximum Ratings Ta = 25°C 0.7±0.2 12.9±0.5 / Parameter Symbol Rating Unit e ) Collector-base voltage (Emitter open) VCBO 60 V c type Collector-emitter voltage (Base open) VCEO 55 V n d ge. ed Emitter-base voltage (Collector open) VEBO 7 2.3±0.2 V le sta ntinu Collector current IC 100 mA a e cyc isco Peak collector current ICP 200 mA life d, d Collector power dissipation PC 400 mW n u duct type Junction temperature Tj 150 °C te tin Pro ued Storage temperature Tstg −55 to +150 .