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BUZ 80A SIPMOS ® Power Transistor • N channel • Enhancement mode Pin 1 G Pin 2 D Pin 3 S Type BUZ 80A VDS 800 V ID 3A RDS(on) 3Ω Package TO-220 AB Ordering Code C67078-A1309-A3 Maximum Ratings Parameter Drain source voltage Drain-gate voltage Symbol Values 800 800 Unit V VDS VDGR ID RGS = 20 kΩ Continuous drain current A 3 TC = 50 °C Pulsed d.
25 mA, Tj = 25 °C
Gate threshold voltage
VGS(th)
2.1
VGS=VDS, ID = 1 mA
Zero gate voltage drain current
IDSS
250 1000
µA
VDS = 800 V, VGS = 0 V, Tj = 25 °C VDS = 800 V, VGS = 0 V, Tj = 125 °C
Gate-source leakage current
IGSS
100
nA Ω 3
VGS = 20 V, VDS = 0 V
Drain-Source on-resistance
RDS(on)
VGS = 10 V, ID = 1.5 A
Semiconductor Group
2
07/96
BUZ 80A
Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Dynamic Characteristics Transconductance Values typ. max. Unit
gfs
1 1.8 1600 90 30 -
S pF 2100 150 55 ns 30 45
VDS≥ 2
* ID
* RDS(on)max, I.
BUZ80A - INCHANGE
isc N-Channel Mosfet Transistor BUZ80A ·FEATURES ·High speed switching ·Low RDS(ON) ·Easy driver for cost effective ap.
BUZ80A - STMicroelectronics
® BUZ80A N - CHANNEL 800V - 2.5Ω - 3.8A - TO-220 FAST POWER MOS TRANSISTOR TYPE BUZ80A V DSS 800 V R DS(on) <3Ω ID .
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | BUZ80 |
STMicroelectronics |
N-Channel Power MOSFET |
|
| 2 | BUZ80 |
Siemens Semiconductor Group |
Power Transistor |
|
| 3 | BUZ80 |
INCHANGE |
N-Channel MOSFET |
|
| 4 | BUZ80FI |
STMicroelectronics |
N-Channel Power MOSFET |
|
| 5 | BUZ80FI |
INCHANGE |
N-Channel MOSFET |
|
| 6 | BUZ81 |
Siemens Semiconductor Group |
Power Transistor |
|
| 7 | BUZ83 |
Siemens Semiconductor Group |
Power Transistor |
|
| 8 | BUZ83 |
INCHANGE |
N-Channel MOSFET |
|
| 9 | BUZ83A |
Siemens Semiconductor Group |
Power Transistor |
|
| 10 | BUZ83A |
INCHANGE |
N-Channel MOSFET |
|
| 11 | BUZ84 |
INCHANGE |
N-Channel MOSFET |
|
| 12 | BUZ84A |
INCHANGE |
N-Channel MOSFET |
|
