BUZ 81 SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 G Pin 2 D Pin 3 S Type BUZ 81 VDS 800 V ID 4A RDS(on) 2.5 Ω Package TO-220 AB Ordering Code C67078-S1345-A2 Maximum Ratings Parameter Continuous drain current Symbol Values 4 Unit A ID IDpuls 16 TC = 48 °C Pulsed drain current TC = 25 °C Avalanche current,l.
c Characteristics Drain- source breakdown voltage Values typ. max. Unit V(BR)DSS 800 3 0.1 10 10 2 4 V VGS = 0 V, ID = 0.25 mA, Tj = 25 °C Gate threshold voltage VGS(th) 2.1 VGS=VDS, ID = 1 mA Zero gate voltage drain current IDSS 1 100 µA VDS = 800 V, VGS = 0 V, Tj = 25 °C VDS = 800 V, VGS = 0 V, Tj = 125 °C Gate-source leakage current IGSS 100 nA Ω 2.5 VGS = 20 V, VDS = 0 V Drain-Source on-resistance RDS(on) VGS = 10 V, ID = 2.8 A Semiconductor Group 2 07/96 BUZ 81 Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Dynamic Characterist.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | BUZ80 |
STMicroelectronics |
N-Channel Power MOSFET | |
2 | BUZ80 |
Siemens Semiconductor Group |
Power Transistor | |
3 | BUZ80 |
INCHANGE |
N-Channel MOSFET | |
4 | BUZ80A |
STMicroelectronics |
N-Channel Power MOSFET | |
5 | BUZ80A |
Siemens Semiconductor Group |
Power Transistor | |
6 | BUZ80A |
Infineon |
Power Transistor | |
7 | BUZ80A |
INCHANGE |
N-Channel MOSFET | |
8 | BUZ80FI |
STMicroelectronics |
N-Channel Power MOSFET | |
9 | BUZ80FI |
INCHANGE |
N-Channel MOSFET | |
10 | BUZ83 |
Siemens Semiconductor Group |
Power Transistor | |
11 | BUZ83 |
INCHANGE |
N-Channel MOSFET | |
12 | BUZ83A |
Siemens Semiconductor Group |
Power Transistor |