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Features
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25 mA, Tj = 25 °C
Gate threshold voltage
VGS(th)
2.1
VGS=VDS, ID = 1 mA
Zero gate voltage drain current
IDSS
250 1000
µA
VDS = 800 V, VGS = 0 V, Tj = 25 °C VDS = 800 V, VGS = 0 V, Tj = 125 °C
Gate-source leakage current
IGSS
100
nA Ω 3
VGS = 20 V, VDS = 0 V
Drain-Source on-resistance
RDS(on)
VGS = 10 V, ID = 1.5 A
Semiconductor Group
2
07/96
BUZ 80A
Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Dynamic Characteristics Transconductance Values typ. max. Unit
gfs
1 1.8 1600 90 30 -
S pF 2100 150 55 ns 30 45
VDS≥ 2 * ID * RDS(on)max, I...
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BUZ80A Data Sheet
