isc N-Channel Mosfet Transistor ·FEATURES ·Static Drain-Source On-Resistance : RDS(on) = 1.5Ω(Max) ·SOA is Power Dissipation Limited ·High speed switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION Designed for applications such as switching regulators, switching converters, motor drivers,relay drivers a.
·Static Drain-Source On-Resistance
: RDS(on) = 1.5Ω(Max)
·SOA is Power Dissipation Limited
·High speed switching
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION Designed for applications such as switching regulators, switching converters, motor drivers,relay drivers and drivers for high power
bipolar switching transistors requiring high speed and low gate drive power.
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL ARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage (VGS=0)
800
V
VGS
Gate-Source Voltage
±20
V
ID
Drain Current-continuous@ TC=37℃.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | BUZ84 |
INCHANGE |
N-Channel MOSFET | |
2 | BUZ80 |
STMicroelectronics |
N-Channel Power MOSFET | |
3 | BUZ80 |
Siemens Semiconductor Group |
Power Transistor | |
4 | BUZ80 |
INCHANGE |
N-Channel MOSFET | |
5 | BUZ80A |
STMicroelectronics |
N-Channel Power MOSFET | |
6 | BUZ80A |
Siemens Semiconductor Group |
Power Transistor | |
7 | BUZ80A |
Infineon |
Power Transistor | |
8 | BUZ80A |
INCHANGE |
N-Channel MOSFET | |
9 | BUZ80FI |
STMicroelectronics |
N-Channel Power MOSFET | |
10 | BUZ80FI |
INCHANGE |
N-Channel MOSFET | |
11 | BUZ81 |
Siemens Semiconductor Group |
Power Transistor | |
12 | BUZ83 |
Siemens Semiconductor Group |
Power Transistor |