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isc N-Channel Mosfet Transistor BUZ80FI ·FEATURES ·High speed switching ·Low RDS(ON) ·Easy driver for cost effective application ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·High current , high speed switching ·Switching mode power supplies ·DC-DC & DC-AC converter ·ABSOLUTE MAXIM.
·High speed switching
·Low RDS(ON)
·Easy driver for cost effective application
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION
·High current , high speed switching
·Switching mode power supplies
·DC-DC & DC-AC converter
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL ARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage (VGS=0)
800
V
VGS
Gate-Source Voltage
±20
V
ID
Drain Current-continuous@ TC=25℃
2.1
A
IDM
Drain Current-Single Plused
13
A
Ptot
Total Dissipation@TC=25℃
40
W
Tj
Max. Operating Junction Temperatur.
BUZ80FI - STMicroelectronics
BUZ80 BUZ80FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE BUZ80 BUZ80FI s s s s s s s V DSS 800 V 800 V R D.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | BUZ80 |
STMicroelectronics |
N-Channel Power MOSFET |
|
| 2 | BUZ80 |
Siemens Semiconductor Group |
Power Transistor |
|
| 3 | BUZ80 |
INCHANGE |
N-Channel MOSFET |
|
| 4 | BUZ80A |
STMicroelectronics |
N-Channel Power MOSFET |
|
| 5 | BUZ80A |
Siemens Semiconductor Group |
Power Transistor |
|
| 6 | BUZ80A |
Infineon |
Power Transistor |
|
| 7 | BUZ80A |
INCHANGE |
N-Channel MOSFET |
|
| 8 | BUZ81 |
Siemens Semiconductor Group |
Power Transistor |
|
| 9 | BUZ83 |
Siemens Semiconductor Group |
Power Transistor |
|
| 10 | BUZ83 |
INCHANGE |
N-Channel MOSFET |
|
| 11 | BUZ83A |
Siemens Semiconductor Group |
Power Transistor |
|
| 12 | BUZ83A |
INCHANGE |
N-Channel MOSFET |
|