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BUZ71A N-Channel Power MOSFET

Semiconductor Data Sheet BUZ71A October 1998 File Number 2419.1 13A, 50V, 0.120 Ohm, N-Channel Power Features [ /Title (BUZ71 A) /Subject MOSFET This is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high .

Features

[ /Title (BUZ71 A) /Subject MOSFET This is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching
• 13A, 50V
• rDS(ON) = 0.120Ω
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds (13A, transistors requiring high speed and low gate drive power. 50V, This type can be operated directly from integrated circuits. 0.120 Formerly developmental type TA9770. Ohm, NChannel Ordering Information
• Linear Transfer Ch.

The same part from a different manufacturer

Datasheet BUZ71A - STMicroelectronics BUZ71A

® BUZ71A N - CHANNEL 50V - 0.1Ω - 13A TO-220 STripFET™ POWER MOSFET T YPE BUZ71A s s s s s V DSS 50 V R DS(on) < 0.1.

Datasheet BUZ71A - Intersil Corporation BUZ71A

only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time withou.

Datasheet BUZ71A - INCHANGE BUZ71A

isc N-Channel Mosfet Transistor ·FEATURES ·Low RDS(on) ·VGS Rated at ±20V ·Silicon Gate for Fast Switching Speed ·Rugge.

Datasheet BUZ71A - Siemens Semiconductor Group BUZ71A

BUZ 71 A Not for new design SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 G Pin 2.

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