BUZ 71 AL Not for new design SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated • Logic Level Pin 1 G Type BUZ 71 AL Pin 2 D Pin 3 S VDS 50 V ID 13 A RDS(on) 0.12 Ω Package TO-220 AB Ordering Code C67078-S1326-A3 Maximum Ratings Parameter Continuous drain current Symbol Values 13 Unit A ID IDpuls 52 TC = 25 °C Pulsed drain.
t for new design Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Static Characteristics Drain- source breakdown voltage Values typ. max. Unit V(BR)DSS 50 1.6 0.1 10 10 0.09 2 V VGS = 0 V, ID = 0.25 mA, Tj = 25 °C Gate threshold voltage VGS(th) 1.2 VGS=VDS, ID = 1 mA Zero gate voltage drain current IDSS 1 100 µA VDS = 50 V, VGS = 0 V, Tj = 25 °C VDS = 50 V, VGS = 0 V, Tj = 125 °C Gate-source leakage current IGSS 100 nA Ω 0.12 VGS = 20 V, VDS = 0 V Drain-Source on-resistance RDS(on) VGS = 5 V, ID = 7 A Semiconductor Group 2 07/96 BUZ 7.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | BUZ71A |
STMicroelectronics |
N-Channel MOSFET | |
2 | BUZ71A |
Siemens Semiconductor Group |
Power Transistor | |
3 | BUZ71A |
Intersil Corporation |
N-Channel Power MOSFET | |
4 | BUZ71A |
Harris |
N-Channel Power MOSFET | |
5 | BUZ71A |
INCHANGE |
N-Channel MOSFET | |
6 | BUZ71 |
STMicroelectronics |
N-CHANNEL POWER MOSFET | |
7 | BUZ71 |
Siemens Semiconductor Group |
Power Transistor | |
8 | BUZ71 |
Intersil Corporation |
N-Channel Power MOSFET | |
9 | BUZ71 |
Fairchild Semiconductor |
N-Channel Power MOSFET | |
10 | BUZ71 |
Comset Semiconductors |
N-Channel Enhancement Mode Power MOS Transistors | |
11 | BUZ71 |
INCHANGE |
N-Channel MOSFET | |
12 | BUZ71FI |
STMicroelectronics |
N-Channel MOSFET |