BUZ71L - Siemens Semiconductor Group

BUZ71L Power Transistor

BUZ 71 L Not for new design SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated • Logic Level Pin 1 G Type BUZ 71 L Pin 2 D Pin 3 S VDS 50 V ID 14 A RDS(on) 0.1 Ω Package TO-220 AB Ordering Code C67078-S1326-A2 Maximum Ratings Parameter Continuous drain current Symbol Values 14 Unit A ID IDpuls 56 TC = 28 °C Pulsed drain cu.

Features

r new design Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Static Characteristics Drain- source breakdown voltage Values typ. max. Unit V(BR)DSS 50 1.6 0.1 10 10 0.08 2 V VGS = 0 V, ID = 0.25 mA, Tj = 25 °C Gate threshold voltage VGS(th) 1.2 VGS=VDS, ID = 1 mA Zero gate voltage drain current IDSS 1 100 µA VDS = 50 V, VGS = 0 V, Tj = 25 °C VDS = 50 V, VGS = 0 V, Tj = 125 °C Gate-source leakage current IGSS 100 nA Ω 0.1 VGS = 20 V, VDS = 0 V Drain-Source on-resistance RDS(on) VGS = 5 V, ID = 7 A Semiconductor Group 2 07/96 BUZ 71 L N.